CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS

被引：48
作者：
TEMPLE, VAK [1 ]
ADLER, MS [1 ]
机构：
[1] GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 10期
关键词：
D O I：
10.1109/T-ED.1975.18241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：910 / 916
页数：7
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