THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES - COMMENT

被引：45

作者：

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.31.2526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2526 / 2527

页数：2

共 16 条

[1]

ADAM MJ, 1969, SOLID STATE ELECTRON, V22, P783

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[3] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[4]

CHIARADIA P, COMMUNICATION

[5] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[6] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[7] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES [J].

KATNANI, AD ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2522-2525

[8] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

[9]

KELLY M, UNPUB

[10]

KROEMER H, 1983 P NATO ADV STUD

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