INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：36

作者：

KUNZEL, H ^{[1
]}

PLOOG, K ^{[1
]}

WUNSTEL, K ^{[1
]}

ZHOU, BL ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02656681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：281 / 308

页数：28

共 22 条

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[3]

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[7] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] QUANTITATIVE-EVALUATION OF SUBSTRATE-TEMPERATURE DEPENDENCE OF GE INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY [J].

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[9]

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[10]

KUNZEL H, UNPUB

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