THERMOELECTRIC POWER ANOMALY IN N-TYPE INSB AT LOW TEMPERATURES

被引:13
作者
KHOSLA, RP
SLADEK, RJ
机构
关键词
D O I
10.1103/PhysRevLett.15.521
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:521 / &
相关论文
共 13 条
[1]   THERMAL CONDUCTIVITY OF INDIUM ANTIMONIDE BETWEEN 1.2 AND 4.0 DEGREES K [J].
CHALLIS, LJ ;
HARNESS, JB ;
CHEEKE, JDN .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1941-&
[2]  
GIBSON AF, 1956, PROGRESS SEMICONDUCT, V1, P63
[3]  
HEDGECOCK FT, 1964, 9 INT C LOW TEMP PHY, P51
[4]   THEORY OF THE THERMOELECTRIC POWER OF SEMICONDUCTORS [J].
HERRING, C .
PHYSICAL REVIEW, 1954, 96 (05) :1163-1187
[5]   PHONON SCATTERING IN SEMICONDUCTORS FROM THERMAL CONDUCTIVITY STUDIES [J].
HOLLAND, MG .
PHYSICAL REVIEW, 1964, 134 (2A) :A471-+
[6]  
JOHNSON VA, 1956, PROGRESS SEMICONDUCT, V1, P63
[7]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[8]   EFFECTS OF S-D INTERACTION ON TRANSPORT PHENOMENA [J].
KASUYA, T .
PROGRESS OF THEORETICAL PHYSICS, 1959, 22 (02) :227-246
[9]  
MACDONALD DKC, 1962, THERMOELECTRICITY IN, P26
[10]  
PURI SM, 1964, PHYS REV A-GEN PHYS, V136, P1767