BACKSIDE-ILLUMINATED PB1-XSNX TE HETEROJUNCTION PHOTODIODE

被引：24

作者：

ANDREWS, AM ^{[1
]}

LONGO, JT ^{[1
]}

CLARKE, JE ^{[1
]}

GERTNER, ER ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 08期

关键词：

D O I：

10.1063/1.88201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：438 / 441

页数：4

共 11 条

[1]

ANDREWS AM, 1974, AFALTR74111 REP

[2]

EDEN RC, 1973, AFALTR72243 REP

[3] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].

GROVES, SH ;

NILL, KW ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :331-333

[4]

Joseph A. S., 1973, Electro-Optical Systems Design, V5, P24

[5] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

LONGO, JT ;

HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&

[6] LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE [J].

LONGO, JT ;

GERTNER, ER ;

JOSEPH, AS .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :202-&

[7]

LONGO JT, 1973, J NONMETALS, V1, P321

[8]

LONGO JT, 1973, AFALTR7387 REP

[9]

PRINCE MB, 1970, SEMICONDUCT SEMIMET, V5, P85

[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J].

ROLLS, WH ;

EDDOLLS, DV .

INFRARED PHYSICS, 1973, 13 (02) :143-147

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