TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON

被引：442
|
作者：
BLUDAU, W
ONTON, A
HEINKE, W
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,HEILBRONNER STR 69,7 STUTTGART 1,WEST GERMANY
[2] WACKER CHEMITR,8263 BURGHAUSEN,EAST GERMANY
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期
关键词：
D O I：
10.1063/1.1663501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1846 / 1848
页数：3
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