DEEP DONOR STATE OF COBALT IN SILICON

被引：4

作者：

WONG, DC ^{[1
]}

PENCHINA, CM ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01002

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：142 / 144

页数：3

共 15 条

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ONTON, A ;

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[2]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, pCH5

[3] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

CHANG, MCP ;

PENCHINA, CM ;

MOORE, JS .

PHYSICAL REVIEW B, 1971, 4 (04) :1229-&

[4] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

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MCLEAN, TP ;

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ROBERTS, V .

PHYSICAL REVIEW, 1958, 111 (05) :1245-1254

[5]

Milnes A., 1973, DEEP IMPURITIES SEMI

[6] ENERGY LEVELS IN COBALT COMPENSATED SILICON [J].

MOORE, JS ;

CHANG, MCP ;

PENCHINA, CM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) :5282-&

[7]

PARILLO LC, 1972, APPL PHYS LETT, V20, P104

[8] COBALT ACCEPTOR STATE IN SILICON - TEMPERATURE-DEPENDENCE OF ENERGY-LEVEL AND CAPTURE CROSS-SECTION [J].

PENCHINA, CM ;

MOORE, JS .

PHYSICAL REVIEW B, 1974, 9 (12) :5217-5221

[9] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

PENCHINA, CM ;

MOORE, JS ;

HOLONYAK, N .

PHYSICAL REVIEW, 1966, 143 (02) :634-&

[10]

VANVECHTEN JA, 1974, B AM PHYS SOC, V19, P211

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