TRIGGERING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：7

作者：

POLMAN, A ^{[1
]}

ROORDA, S ^{[1
]}

STOLK, PA ^{[1
]}

SINKE, WC ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(91)90359-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial stages of explosive crystallization (EC) of amorphous Si (a-Si) are investigated. A thin layer of liquid Si (l-Si), highly undercooled with respect to crystalline Si (c-Si) is formed by nanosecond pulsed ruby laser irradiation of a-Si prepared by ion implantation. Time-resolved reflectivity measurements are used to determine the time delay in the onset of EC for different surface structures. If a thin single crystal layer of Si covers the a-Si, EC proceeds immediately. In the absence of a seed for EC, a maximum time delay of 11+/-2 ns is observed. Intermediate delay times are found if the surface layer contains small c-Si clusters.

引用

页码：114 / 120

页数：7

共 50 条

[21] CRYSTALLIZATION BEHAVIOR OF AMORPHOUS-SILICON NITRIDE POWDER
HOJO, J
MAEDA, H
KATO, A
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1988, 96 (08): : 842 - 846
[22] RETARDING CRYSTALLIZATION OF CVD AMORPHOUS-SILICON BY ALLOYING
BOOTH, DC
ALLRED, DD
SERAPHIN, BO
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 213 - 218
[23] CRYSTALLIZATION INSTABILITY AT THE AMORPHOUS-SILICON LIQUID-SILICON INTERFACE
TSAO, JY
PEERCY, PS
PHYSICAL REVIEW LETTERS, 1987, 58 (26) : 2782 - 2785
[24] PHENOMENOLOGICAL THEORY OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON .2. DYNAMIC PROCESSES
HEINIG, KH
GEILER, HD
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (01): : 99 - 104
[25] CRYSTALLIZATION OF AMORPHOUS-SILICON BY RECONSTRUCTIVE TRANSFORMATION UTILIZING GOLD
STOEMENOS, J
MCINTOSH, J
ECONOMOU, NA
BHATNAGAR, YK
COXON, PA
LOWE, AJ
CLARK, MG
APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1196 - 1198
[26] Effect of ion irradiation of amorphous-silicon films on their crystallization
Bakhtina, NV
Mashin, AI
Pavlov, AP
Pitirimova, EA
SEMICONDUCTORS, 1998, 32 (03) : 316 - 319
[27] LOW-TEMPERATURE SELECTIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
KAKKAD, R
LIU, G
FONASH, SJ
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) : 66 - 68
[28] THE POLYCENTER CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS AT PULSE ANNEALING
BALANDIN, VY
DVURECHENSKII, AV
ALEKSANDROV, LN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 587 - 592
[29] Rapid melt crystallization of amorphous-silicon thin films
Liu, Fude
Wang, Lei
Yang, Guandong
Wang, Wentao
APPLIED PHYSICS LETTERS, 2013, 102 (08)
[30] INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON FILM IN CONTACT WITH ALUMINUM
CAI, W
WAN, DR
THIN SOLID FILMS, 1992, 219 (1-2) : 1 - 3

← 1 2 3 4 5 →