TRIGGERING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：7

作者：

POLMAN, A ^{[1
]}

ROORDA, S ^{[1
]}

STOLK, PA ^{[1
]}

SINKE, WC ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(91)90359-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial stages of explosive crystallization (EC) of amorphous Si (a-Si) are investigated. A thin layer of liquid Si (l-Si), highly undercooled with respect to crystalline Si (c-Si) is formed by nanosecond pulsed ruby laser irradiation of a-Si prepared by ion implantation. Time-resolved reflectivity measurements are used to determine the time delay in the onset of EC for different surface structures. If a thin single crystal layer of Si covers the a-Si, EC proceeds immediately. In the absence of a seed for EC, a maximum time delay of 11+/-2 ns is observed. Intermediate delay times are found if the surface layer contains small c-Si clusters.

引用

页码：114 / 120

页数：7

共 23 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
SURKO, CM
VENKATESAN, TNC
SLUSHER, RE
GOLOVCHENKO, JA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
[2] TIME-RESOLVED REFLECTIVITY MEASUREMENTS DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
BRUINES, JJP
VANHAL, RPM
BOOTS, HMJ
POLMAN, A
SARIS, FW
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1160 - 1162
[3] BRUINES JJP, 1988, THESIS EINDHOVEN TU
[4] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY
BUSTARRET, E
HACHICHA, MA
BRUNEL, M
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1675 - 1677
[5] Chu W.-K., 1978, BACKSCATTERING SPECT
[6] ORIENTATION DEPENDENCE OF HIGH-SPEED SILICON CRYSTAL-GROWTH FROM THE MELT
CULLIS, AG
CHEW, NG
WEBBER, HC
SMITH, DJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 624 - 638
[7] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[8] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA
DOOLITTLE, LR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351
[9] DOSE DEPENDENCE OF CRYSTALLIZATION IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2
IVERSON, RB
REIF, R
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 645 - 647
[10] Lowndes D. H., 1987, Journal of Materials Research, V2, P648, DOI 10.1557/JMR.1987.0648

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