PRESSURE-TUNED PBSE DIODE LASER (HE GAS PRESSURE 1 TO 7000 BARS VARIATION OF EMISSION PEAK AND REFRACTIVE INDEX 77 DEGREES K E)

被引：49

作者：

BESSON, JM

BUTLER, JF

CALAWA, AR

PAUL, W

REDIKER, RH

机构：

来源：

关键词：

D O I：

10.1063/1.1754380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：206 / &

共 9 条

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[3] EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS
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[4] FENNER GE, 1965, PHYS REV, V137, P1000
[5] FULTON J, 1964, APPL PHYS LETTERS, V4, P9
[6] FREQUENCY TUNING OF GAAS LASER DIODE BY UNIAXIAL STRESS
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BRAUNSTEIN, R
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (10) : 171 - 172
[7] MILLER RC, 1964, P INTERNATIONAL C SE
[8] PRAKASH V, TO BE PUBLISHED
[9] LINE WIDTHS AND PRESSURE SHIFTS IN MODE STRUCTURE OF STIMULATED EMISSION FROM GAAS JUNCTIONS
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AXE, JD
LANKARD, JR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (02) : 155 - 156