ION CHANNELING ANALYSIS OF A SI1-XGEX(AS)/SI STRAINED LAYER

被引：4
|
作者：
MOORE, JA
LENNARD, WN
MASSOUMI, GR
JACKMAN, TE
BARIBEAU, JM
JACKMAN, JA
机构：
[1] UNIV WESTERN ONTARIO,LONDON N6A 3K7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
[3] ENERGY MINES & RESOURCES CANADA,OTTAWA K1A 0G1,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期
关键词：
D O I：
10.1063/1.101364
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2571 / 2573
页数：3
相关论文
共 50 条
  • [41] Confirmation of proton beam bending in graded Si1-xGex/Si layers using ion channeling
    de Kerckhove, DG
    Breese, MBH
    Smulders, PJM
    Jamieson, DN
    APPLIED PHYSICS LETTERS, 1999, 74 (02) : 227 - 229
  • [42] Electron tunneling in a strained n-type Si1-xGex/Si/Si1-xGex double-barrier structure
    Hung, K. M.
    Cheng, T. H.
    Huang, W. P.
    Wang, K. Y.
    Cheng, H. H.
    Sun, G.
    Soref, R. A.
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [43] Resonant tunneling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum wells
    Berashevich, Julia A.
    Borisenko, Viktor E.
    Lazzari, Jean-Louis
    D'Avitaya, Francois Arnaud
    PHYSICAL REVIEW B, 2007, 75 (11)
  • [44] Antimony diffusion in strained and relaxed Si1-xGex
    Department of Engineering Materials, University of Southampton, Southampton SO17 1BJ, United Kingdom
    不详
    不详
    不详
    Diffus Defect Data Pt A Diffus Forum, (1131-1134):
  • [45] Dopant diffusion in strained and relaxed Si1-xGex
    Southampton Univ, Southampton, United Kingdom
    Mater Sci Forum, pt 1 (345-348):
  • [46] Dopant diffusion in strained and relaxed Si1-xGex
    Paine, ADN
    Morooka, M
    Willoughby, AFW
    Bonar, JM
    Phillips, P
    Dowsett, MG
    Cooke, G
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196-2 : 345 - 348
  • [47] SPECTROSCOPIC ELLIPSOMETRY OF STRAINED SI1-XGEX LAYERS
    LIBEZNY, M
    POORTMANS, J
    CAYMAX, M
    VANAMMEL, A
    KUBENA, J
    HOLY, V
    VANHELLEMONT, J
    THIN SOLID FILMS, 1993, 233 (1-2) : 158 - 161
  • [48] Boron diffusion in strained and relaxed Si1-xGex
    Zangenberg, NR
    Fage-Pedersen, J
    Hansen, JL
    Nylandsted-Larsen, A
    DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2, 2001, 194-1 : 703 - 708
  • [49] FACET FORMATION IN STRAINED SI1-XGEX FILMS
    LUTZ, MA
    FEENSTRA, RM
    MOONEY, PM
    TERSOFF, J
    CHU, JO
    SURFACE SCIENCE, 1994, 316 (03) : L1075 - L1080
  • [50] The spectrum hole in the strained layers Si1-xGex
    Sychev, AY
    Makarov, EA
    IEEE 2001 SIBERIAN RUSSIAN STUDENT WORKSHOPS ON ELECTRON DEVICES AND MATERIALS PROCEEDINGS, 2001, : 24 - 25
12345