ION CHANNELING ANALYSIS OF A SI1-XGEX(AS)/SI STRAINED LAYER

被引:4
|
作者
MOORE, JA
LENNARD, WN
MASSOUMI, GR
JACKMAN, TE
BARIBEAU, JM
JACKMAN, JA
机构
[1] UNIV WESTERN ONTARIO,LONDON N6A 3K7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
[3] ENERGY MINES & RESOURCES CANADA,OTTAWA K1A 0G1,ONTARIO,CANADA
关键词
D O I
10.1063/1.101364
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2571 / 2573
页数:3
相关论文
共 50 条
  • [1] ION CHANNELING ANALYSIS OF MBE GROWN SI1-XGEX/SI STRAINED LAYER SUPERLATTICES
    PARIKH, NR
    SANDHU, GS
    YU, N
    CHU, WK
    JACKMAN, TE
    BARIBEAU, JM
    HOUGHTON, DC
    THIN SOLID FILMS, 1988, 163 : 455 - 460
  • [2] RELAXATION OF SI/SI1-XGEX STRAINED LAYER STRUCTURES
    GIBBINGS, CJ
    TUPPEN, CG
    HALLIWELL, MAG
    HOCKLY, M
    DAVEY, ST
    LYONS, MH
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 121 - 128
  • [3] Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal
    Backe, H.
    Krambrich, D.
    Lauth, W.
    Andersen, K. K.
    Hansen, J. Lundsgaard
    Uggerhoj, Ulrik I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 309 : 37 - 44
  • [4] Photoluminescence Properties of Si1-xGex/Si Strained Layer Structures
    PENG Yingcai(Hebei University
    SemiconductorPhotonicsandTechnology, 1996, (03) : 168 - 174
  • [5] STRAIN RELAXATION AND INTERDIFFUSION IN SI/SI1-XGEX STRAINED LAYER SUPERLATTICES
    GOORSKY, MS
    KESAN, VP
    OTT, JA
    ANGILELLO, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 927 - 929
  • [6] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [7] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [8] ION-SCATTERING STUDIES OF STRAINED SI/SI1-XGEX SUPERLATTICES
    HOLLANDER, B
    MANTL, S
    STRITZKER, B
    BUTZ, R
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) : 415 - 420
  • [9] Dopant layer abruptness in strained Si1-xGex heterostructures
    Rowell, NL
    Houghton, DC
    Berbezier, I
    Ronda, A
    Webb, D
    Ward, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 939 - 942
  • [10] A study of channeling patterns from strained Si1-xGex/Si bilayers close to (011) axes
    Breese, MBH
    Smulders, PJM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 129 (04): : 511 - 518