SYNTHESIS OF AL-XGA-1-XAS AND GAAS-1-XP-X BY IMPLANTATION OF AL+ AND P+ IONS INTO GAAS

被引：0

作者：

BELYI, IM ^{[1
]}

GUMANSKII, GA ^{[1
]}

KARAS, VI ^{[1
]}

LOMAKO, VM ^{[1
]}

TASHLYKOV, IS ^{[1
]}

TISHKOV, VS ^{[1
]}

机构：

[1] VI LENIN STATE UNIV,APPL PHYS TECHNOL RES INST,MINSK,BESSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1326 / 1327

页数：2

共 7 条

[1] AKIMCHEN.IP, 1972, SOV PHYS SEMICOND+, V6, P1039
[2] ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V6, P589
[3] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V5, P982
[4] BARANOVA EK, 1971, DOKL AKAD NAUK SSSR+, V200, P869
[5] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[6] GORODETSKII AE, 1968, SOV PHYS SEMICOND+, V2, P116
[7] GA1-XALX AS PRODUCED BY AL+ ION IMPLANTATION OF GAAS
HUNSPERGER, RG
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 327 - +