XPS STUDIES OF SIO2 SURFACE-LAYERS FORMED BY OXYGEN ION-IMPLANTATION INTO SILICON

被引：9

作者：

SCHULZE, D ^{[1
]}

FINSTER, J ^{[1
]}

HENSEL, E ^{[1
]}

SKORUPA, W ^{[1
]}

KREISSIG, U ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 76卷 / 01期

关键词：

D O I：

10.1002/pssa.2210760153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K21 / K24

页数：4

共 9 条

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[2]

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THIN SOLID FILMS, 1978, 55 (03) :435-448

[4] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

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[5] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

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MAEYAMA, S ;

YOSHII, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :1111-1116

[6]

HIRSCH D, 1981, 12 ARB TAG PHYS HALB, P27

[7] THE FORMATION OF SIO2-FILMS ON SILICON BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

KREISSIG, U ;

HENSEL, E ;

SKORUPA, W ;

JOHANSEN, H .

THIN SOLID FILMS, 1982, 98 (03) :229-232

[8]

MENDE G, UNPUB SURFACE SCI

[9] SPECTROPHOTOMETRIC THICKNESS MEASUREMENT FOR VERY THIN SIO2 FILMS ON SI [J].

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :787-&

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