CO/SI(111) INTERFACE FORMATION AT ROOM-TEMPERATURE

被引：36

作者：

DERRIEN, J ^{[1
]}

DECRESCENZI, M ^{[1
]}

CHAINET, E ^{[1
]}

DANTERROCHES, C ^{[1
]}

PIRRI, C ^{[1
]}

GEWINNER, G ^{[1
]}

PERUCHETTI, JC ^{[1
]}

机构：

[1] LAB PHYS & SPECT ELECTR,F-68093 MULHOUSE,FRANCE

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.36.6681

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6681 / 6684

页数：4

共 24 条

[1] CORRELATION-EFFECTS IN VALENCE-BAND SPECTRA OF NICKEL SILICIDES [J].

BISI, O ;

CALANDRA, C ;

DELPENNINO, U ;

SASSAROLI, P ;

VALERI, S .

PHYSICAL REVIEW B, 1984, 30 (10) :5696-5703

[2] HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION [J].

BOSCHERINI, F ;

JOYCE, JJ ;

RUCKMAN, MW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (09) :4216-4220

[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[4]

CHAINET E, 1986, SURF SCI, V168, P309

[5] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2 [J].

CHEN, LJ ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1982, 93 (1-2) :135-141

[6] COMMENT ON QUASI-ATOMIC AUGER-SPECTRA IN NARROW-BAND METALS [J].

CINI, M .

PHYSICAL REVIEW B, 1978, 17 (06) :2788-2789

[7] THEORY OF AUGER-XVV SPECTRA OF SOLIDS - MANY-BODY EFFECTS IN INCOMPLETELY FILLED BANDS [J].

CINI, M .

SURFACE SCIENCE, 1979, 87 (02) :483-500

[8]

DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770

[9] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J].

DAVITAYA, FA ;

CHROBOCZEK, JA ;

DANTERROCHES, C ;

GLASTRE, G ;

CAMPIDELLI, Y ;

ROSENCHER, E .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :463-469

[10] STRUCTURAL AND ELECTRONIC-PROPERTIES OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].

DERRIEN, J .

SURFACE SCIENCE, 1986, 168 (1-3) :171-183

← 1 2 3 →