GROWTH OF GAAS/ERAS/GAAS STRUCTURES BY MIGRATION-ENHANCED EPITAXY

被引：18
|
作者：
YAMAGUCHI, H
HORIKOSHI, Y
机构：
[1] NTT Basic Research Laboratories, Musashino-shi
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 19期
关键词：
D O I：
10.1063/1.107020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Monocrystalline GaAs/ErAs/GaAs structures are fabricated by migration-enhanced epitaxy at 320-degrees-C. When the ErAs layer thickness is less than 3 monolayers, reflection high-energy electron diffraction patterns, double crystal x-ray diffraction analysis, and transmission electron microscopy observations show successful overgrowth of GaAs on the ErAs layer. Distinct satellite peaks are observed in an x-ray rocking curve of an ErAs/GaAs superlattice grown under a similar condition, indicating that high-quality multilayer structures with very thin ErAs layers can be fabricated by migration-enhanced epitaxy.
引用
收藏
页码：2341 / 2343
页数：3
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