TRANSPORT AND LOCALIZATION IN ND2-XCEXCUO4-Y CRYSTALS AT LOW DOPING

被引：68

作者：

HAGEN, SJ ^{[1
]}

XU, XQ ^{[1
]}

JIANG, W ^{[1
]}

PENG, JL ^{[1
]}

LI, ZY ^{[1
]}

GREENE, RL ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.45.515

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report in-plane transport properties of Nd2-xCexCuO4-y crystals prepared in low-doped (x approximately 0.01-0.11), nonsuperconducting compositions. The large negative Hall coefficient R(H) and thermopower S in these samples confirm the presence of a small density of n-type carriers. At low T we find a highly anisotropic negative magnetoresistance which, together with the behavior of rho, S, and R(H), demonstrates two-dimensional weak localization of these carriers occurring as Ce content decreases. Analysis of the magnetoresistance data reveals an anomalously weak T dependence of the electron inelastic-scattering rate 1/tau(i).

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页码：515 / 518

页数：4

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