HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE

被引：134

作者：

ASAI, M

UEBA, H

TATSUYAMA, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.335886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2577 / 2583

页数：7

共 21 条

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