CATION INCORPORATION RATE LIMITATIONS IN MOLECULAR-BEAM EPITAXY - EFFECTS OF STRAIN AND SURFACE-COMPOSITION

被引：52

作者：

EVANS, KR ^{[1
]}

STUTZ, CE ^{[1
]}

LORANCE, DK ^{[1
]}

JONES, RL ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,DIV ELECTR TECHNOL AFWAL AAD,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：259 / 263

页数：5

共 21 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[3] THERMAL-DESORPTION SPECTROSCOPY OF XE AT THE SI(111) AS A LOCAL PROBE FOR SURFACE-STRUCTURES [J].

BARTHA, JW ;

BARJENBRUCH, U ;

HENZLER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1588-1591

[4] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J].

CHIKA, S ;

KATO, H ;

NAKAYAMA, M ;

SANO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1441-1442

[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[6]

DUDLEY S, COMMUNICATION

[7]

EVANS KR, IN PRESS J CRYST GRO

[8] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[9]

FOXON CT, IN PRESS J CRYST GRO

[10]

FOXON CT, 1986, HETEROJUNCTIONS SEMI, P216

← 1 2 3 →