RECORD LOW-THRESHOLD INDEX-GUIDED INGAAS/GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A NATIVE-OXIDE CONFINEMENT STRUCTURE

被引：135
作者：
HAYASHI, Y
MUKAIHARA, T
HATORI, N
OHNOKI, N
MATSUTANI, A
KOYAMA, F
IGA, K
机构：
[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Yokohama 226, 4259 Nagatsuta, Midoriku
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 07期
关键词：
VERTICAL CAVITY SURFACE EMITTING LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19950391
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 mu A was achieved with a 5 mu m-diameter core device. The proposed structure provides strong electrical and optical confinements. Also a reduction in nonradiative recombination and an improvement in the thermal resistance can be expected.
引用
收藏
页码：560 / 562
页数：3
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