DIFFUSION AND DRIFT OF SI DOPANTS IN DELTA-DOPED N-TYPE ALXGA1-XAS

被引：60

作者：

SCHUBERT, EF

TU, CW

KOPF, RF

KUO, JM

LUNARDI, LM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期

关键词：

D O I：

10.1063/1.101059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2592 / 2594

页数：3

共 10 条

[1] EXPERIMENTAL AND THEORETICAL MOBILITY OF ELECTRONS IN DELTA-DOPED GAAS [J].

GILLMAN, G ;

VINTER, B ;

BARBIER, E ;

TARDELLA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :972-974

[2]

HEADRICK RL, UNPUB

[3] NONRANDOM DOPING AND ELASTIC-SCATTERING OF CARRIERS IN SEMICONDUCTORS [J].

LEVI, AFJ ;

MCCALL, SL ;

PLATZMAN, PM .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :940-942

[4]

Pfeiffer L. N., UNPUB

[5] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

SASA, S ;

MUTO, S ;

KONDO, K ;

ISHIKAWA, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L602-L604

[6] DOPANT DISTRIBUTION FOR MAXIMUM CARRIER MOBILITY IN SELECTIVELY DOPED AL0.30GA0.70AS/GAAS HETEROSTRUCTURES [J].

SCHUBERT, EF ;

PFEIFFER, L ;

WEST, KW ;

IZABELLE, A .

APPLIED PHYSICS LETTERS, 1989, 54 (14) :1350-1352

[7] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT .

SOLID STATE COMMUNICATIONS, 1987, 63 (07) :591-594

[8] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT ;

TIMP, GL .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1170-1172

[9] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS [J].

SCHUBERT, EF ;

STARK, JB ;

ULLRICH, B ;

CUNNINGHAM, JE .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1508-1510

[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

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