STRUCTURAL CHARACTERIZATION OF GAAS/ZNSE INTERFACES

被引：99

作者：

TAMARGO, MC

DEMIGUEL, JL

HWANG, DM

FARRELL, HH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / 787

页数：4

共 6 条

[1] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100) [J].

FARRELL, HH ;

TAMARGO, MC ;

DEMIGUEL, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :767-768

[2] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS [J].

GUNSHOR, RL ;

KOLODZIEJSKI, LA ;

MELLOCH, MR ;

VAZIRI, M ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :200-202

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE [J].

HARBISON, JP ;

FARRELL, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :733-735

[4] EFFECT OF LATTICE MISMATCH IN ZNSE EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

MOHAMMED, K ;

CAMMACK, DA ;

DALBY, R ;

NEWBURY, P ;

GREENBERG, BL ;

PETRUZELLO, J ;

BHARGAVA, RN .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :37-39

[5] ZNSE-GAAS AND SE-GAAS INTERFACES [J].

TU, DW ;

KAHN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :922-925

[6]

YAO T, TECHNOLOGY PHYSICS M, P313

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