BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE

被引：23

作者：

IIMURA, Y

KAWABE, M

机构：

[1] Univ of Tsukuba, Inst of Material, Science, Sakura-mura, Jpn, Univ of Tsukuba, Inst of Material Science, Sakura-mura, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

BERYLLIUM DOPING - GROWTH KINETICS - REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION - RHEED;

D O I：

10.1143/JJAP.25.L81

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L81 / L84

页数：4

共 13 条

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[9] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY [J].

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