HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON

被引：19
|
作者：
TAMURA, M
SHUKURI, S
ISHITANI, T
ICHIKAWA, M
DOI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 06期
关键词：
D O I：
10.1143/JJAP.23.L417
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L417 / L420
页数：4
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