HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON

被引：19
|
作者：
TAMURA, M
SHUKURI, S
ISHITANI, T
ICHIKAWA, M
DOI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 06期
关键词：
D O I：
10.1143/JJAP.23.L417
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L417 / L420
页数：4
相关论文
共 50 条
  • [1] DOSE-RATE EFFECTS IN FOCUSED-ION-BEAM IMPLANTATION OF SI INTO GAAS
    LEZEC, HJ
    MUSIL, CR
    MELNGAILIS, J
    MAHONEY, LJ
    WOODHOUSE, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05): : 2709 - 2713
  • [2] FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON
    TAMURA, M
    SHUKURI, S
    ICHIKAWA, M
    WADA, Y
    ISHITANI, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 858 - 863
  • [3] On the high-dose effect in the case of ion implantation of silicon
    D. I. Tetelbaum
    A. I. Gerasimov
    Semiconductors, 2004, 38 : 1260 - 1262
  • [4] On the high-dose effect in the case of ion implantation of silicon
    Tetelbaum, DI
    Gerasimov, AI
    SEMICONDUCTORS, 2004, 38 (11) : 1260 - 1262
  • [5] Precipitation of Boron in Silicon on High-Dose Implantation
    Feklistov, K. V.
    Fedina, L. I.
    Cherkov, A. G.
    SEMICONDUCTORS, 2010, 44 (03) : 285 - 288
  • [6] Precipitation of boron in silicon on high-dose implantation
    K. V. Feklistov
    L. I. Fedina
    A. G. Cherkov
    Semiconductors, 2010, 44 : 285 - 288
  • [7] ELECTRICAL-PROPERTIES OF FOCUSED-ION-BEAM BORON-IMPLANTED SILICON
    TAMURA, M
    SHUKURI, S
    TACHI, S
    ISHITANI, T
    TAMURA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L700 - L702
  • [8] ELECTRICAL PROPERTIES OF FOCUSED-ION-BEAM BORON-IMPLANTED SILICON.
    Tamura, Masao
    Shukuri, Shoji
    Tachi, Shinichi
    Ishitani, Tohru
    Tamura, Hifumi
    1600, (22):
  • [9] The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching
    Sievila, Paivi
    Chekurov, Nikolai
    Tittonen, Ilkka
    NANOTECHNOLOGY, 2010, 21 (14)
  • [10] FABRICATION OF PERIODIC STRUCTURES IN GAAS BY FOCUSED-ION-BEAM IMPLANTATION
    SHIOKAWA, T
    ISHIBASHI, K
    KIM, PH
    AOYAGI, Y
    TOYODA, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (12): : 2864 - 2867
12345