LINE DEFECTS IN SILICON - THE 90-PERCENT PARTIAL DISLOCATION

被引：49

作者：

CHELIKOWSKY, JR ^{[1
]}

SPENCE, JCH ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.694

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：694 / 701

页数：8

共 34 条

[1] A NOTE ON THE PEIERLS RECONSTRUCTION OF DISLOCATION CORES [J].

ALTMANN, SL .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (05) :907-911

[2] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[3] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

[5] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[6]

CHADI DJ, COMMUNICATION

[7] 30-DEGREE PARTIAL DISLOCATIONS IN SILICON - ABSENCE OF ELECTRICALLY ACTIVE STATES [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW LETTERS, 1982, 49 (21) :1569-1572

[8]

HIRSCH PB, 1979, J MICROSC OXFORD, V118, P3

[9]

Hirth J.P., 1982, THEORY DISLOCATIONS

[10] ELECTRICAL-PROPERTIES OF DISLOCATION LINES IN SILICON [J].

JAROS, M ;

KIRTON, MJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :85-88

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