EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE

被引：13

作者：

LUCKE, W ^{[1
]}

COMAS, J ^{[1
]}

HUBLER, G ^{[1
]}

DUNNING, K ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：994 / 997

页数：4

共 14 条

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[2] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].

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GIRARD, E ;

MOULIN, J .

NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&

[3] SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT [J].

COMAS, J ;

COOPER, CB .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2820-&

[4] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :943-&

[5]

DUNNING KL, 1973, THIN SOLID FILMS, V19, P1

[6]

DUNNING RL, 1972, IEEE T NUCL SCI, VNS19, P243

[7]

Hart R. R., 1971, Radiation Effects, V9, P261, DOI 10.1080/00337577108231058

[8]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[9]

LINDHARD J, 1963, DAN VID SELSK MAT FY, P33

[10] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J].

MEYER, O ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4166-&

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