Effect of pressure on turnover behaviour in I-V characteristic curves in GeTeSe chalcogenide glass.

被引:5
作者
ElMansy, MK [1 ]
ElZaidia, MM [1 ]
ElHassan, EA [1 ]
Ammar, AA [1 ]
机构
[1] MENOUFIA UNIV,FAC SCI,SHIBIN AL KAWM,EGYPT
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 10期
关键词
Amorphous and glassy semiconductors; Conductivity of specific semiconductors and insulators;
D O I
10.1007/BF02454126
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thick layers of GeTeSe chalcogenide glass have been prepared and subjected to conduction measurements under the effect of both temperature and pressure. The results of the I-V characteristics exhibit transition from high-resistance state to differential negative resistance state through a turnover point. The application of uniaxial pressure shows the similar effect of temperature on that behaviour. Both current and voltage at the turnover point depend on pressure and ambient temperature. The rise of temperature in the conduction path due to joule heating and application of uniaxial pressure as well as the reduction in the energy gap width (beta = 2.87.10(-12) eV/N m(-2)) are estimated and discussed at the turnover point. This behaviour is explained according to the orientation of dipoles randomly dispersed in viscous amorphous matrix.
引用
收藏
页码:1121 / 1130
页数:10
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