POROUS SILICON - X-RAYS SENSITIVITY

被引：1

作者：

GERSTENMAYER, JL ^{[1
]}

VIBERT, P ^{[1
]}

MERCIER, P ^{[1
]}

RAYER, C ^{[1
]}

HYVERNAGE, M ^{[1
]}

HERINO, R ^{[1
]}

BSIESY, A ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 353卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(94)91661-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)?

引用

页码：299 / 301

页数：3

共 8 条

[1]

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[3] VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON [J].

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[4]

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[6]

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[7] MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON [J].

VIAL, JC ;

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HERINO, R ;

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PHYSICAL REVIEW B, 1992, 45 (24) :14171-14176

[8] BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - A QUANTUM CONFINEMENT EFFECT [J].

VIAL, JC ;

BILLAT, S ;

BSIESY, A ;

FISHMAN, G ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MADEORE, F ;

MIHALCESCU, I ;

MULLER, F ;

ROMESTAIN, R .

PHYSICA B, 1993, 185 (1-4) :593-602

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