SPECTRO-ELLIPSOMETRY CHARACTERIZATION OF OPTICAL-QUALITY VAPOR-DEPOSITED DIAMOND THIN-FILMS

被引：44

作者：

CONG, Y

COLLINS, RW

EPPS, GF

WINDISCHMANN, H

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

[2] BP AMER RES CTR,CLEVELAND,OH 44128

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantitative characterizational methods are required to optimize vapor-deposited diamond thin films for optical applications. In this work, spectroellipsometry has been applied to deduce two important characteristics of diamond films: the volume fraction of sp2-bonded defects in the bulk and the thickness of the roughness layer on the surface. We have determined these characteristics versus substrate temperature and CH4:H-2 flow ratio for optical quality films prepared to 1000-4000 angstrom by microwave plasma-assisted chemical vapor deposition. Under optimum conditions, uniform films with approximately 100 angstrom roughness and 3 vol.% bulk sp2C are obtained.

引用

页码：819 / 821

页数：3

共 12 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].