THE BEHAVIOR OF DOPED HG1-XCDXTE EPITAXIAL LAYERS GROWN FROM HG-RICH MELTS

被引：48
作者：
KALISHER, MH
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(84)90288-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：365 / 372
页数：8
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