THE INFLUENCE OF RADIATION-DAMAGE ON THE SPUTTERING YIELD OF SILICON

被引:12
|
作者
SIELANKO, J
SOWA, M
机构
来源
关键词
D O I
10.1016/0167-5087(83)90842-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
10
引用
收藏
页码:483 / 486
页数:4
相关论文
共 50 条
  • [1] SPUTTERING YIELD AND RADIATION-DAMAGE BY NEUTRAL BEAM BOMBARDMENT
    MIZUTANI, T
    NISHIMATSU, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1417 - 1420
  • [2] INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON
    ZOLOTUKHIN, AA
    KOVALENKO, AK
    MESHCHERYAKOVA, TM
    MILEVSKII, LS
    PAGAVA, TA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 800 - 800
  • [3] RADIATION-DAMAGE IN SILICON
    SALISBURY, IG
    LORETTO, MH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 59 (1-2): : 59 - 68
  • [4] RADIATION-DAMAGE IN SILICON DETECTORS
    KRANER, HW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03): : 615 - 618
  • [5] RADIATION-DAMAGE IN SILICON DETECTORS
    WUNSTORF, R
    FRETWURST, E
    GRIEGER, E
    HERDAN, H
    LINDSTROM, G
    ROLLWAGEN, M
    BOTTGER, R
    SCHOLERMANN, H
    ECFA STUDY WEEK ON INSTRUMENTATION TECHNOLOGY FOR HIGH-LUMINOSITY HADRON COLLIDERS, PROCEEDINGS VOLS 1-2, 1989, 89 : 321 - 323
  • [6] RADIATION-DAMAGE IN SILICON DETECTORS
    BORCHI, E
    BRUZZI, M
    RIVISTA DEL NUOVO CIMENTO, 1994, 17 (11): : 1 - 63
  • [7] THE INFLUENCE OF ELECTRIC-FIELD ON THE FORMATION OF RADIATION-DAMAGE IN SILICON
    BOLDYREV, SN
    VYATKIN, AF
    MORDKOVICH, VN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4): : 155 - 158
  • [8] RADIATION-DAMAGE IN SILICON STRIP DETECTORS
    DIETL, H
    GOOCH, T
    KELSEY, D
    KLANNER, R
    LOFFLER, A
    PEPE, M
    WICKENS, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 460 - 466
  • [9] RADIATION-DAMAGE IN SILICON MICROSTRIP DETECTORS
    OHSUGI, T
    TAKETANI, A
    NODA, M
    CHIBA, Y
    ASAI, M
    KONDO, T
    SATO, T
    TAKASAKI, M
    TANAKA, KH
    KONDO, K
    HIRAYAMA, H
    YAMAMOTO, K
    TANAKA, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (1-2): : 105 - 111
  • [10] INFLUENCE OF RADIATION-DAMAGE ON IMPURITY DIFFUSION FROM IMPLANTED LAYER IN SILICON
    PAVLOV, PV
    PASHKOV, VI
    TULOVCHIKOV, VS
    CHIGIRINSKAYA, GY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 181 - 183