THE INFLUENCE OF RADIATION-DAMAGE ON THE SPUTTERING YIELD OF SILICON

被引：12

作者：

SIELANKO, J

SOWA, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90842-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：483 / 486

页数：4

共 10 条

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[2] BERNHEIM M, 1973, ION SURFACE INTERACT, P157
[3] INFLUENCE OF IMPLANTED XENON ON SPUTTERING YIELD OF SILICON
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[4] DEPENDENCE OF SPUTTERING COEFFICIENT ON ION DOSE
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[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 14 - 17
[6] NELSON RS, 1973, ION SURFACE INTERACT, P199
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[J]. APPLIED PHYSICS, 1975, 8 (03): : 185 - 198
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[J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +
[9] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 153 - &
[10] 1979, SIMS, V1