共 50 条
- [1] SPUTTERING YIELD AND RADIATION-DAMAGE BY NEUTRAL BEAM BOMBARDMENT JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1417 - 1420
- [2] INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 800 - 800
- [4] RADIATION-DAMAGE IN SILICON DETECTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03): : 615 - 618
- [5] RADIATION-DAMAGE IN SILICON DETECTORS ECFA STUDY WEEK ON INSTRUMENTATION TECHNOLOGY FOR HIGH-LUMINOSITY HADRON COLLIDERS, PROCEEDINGS VOLS 1-2, 1989, 89 : 321 - 323
- [7] THE INFLUENCE OF ELECTRIC-FIELD ON THE FORMATION OF RADIATION-DAMAGE IN SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4): : 155 - 158
- [8] RADIATION-DAMAGE IN SILICON STRIP DETECTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 460 - 466
- [9] RADIATION-DAMAGE IN SILICON MICROSTRIP DETECTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (1-2): : 105 - 111
- [10] INFLUENCE OF RADIATION-DAMAGE ON IMPURITY DIFFUSION FROM IMPLANTED LAYER IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 181 - 183