首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
PRODUCTION OF ELECTRON-HOLE PAIRS IN SIO2-FILMS
被引:1
|
作者
:
PETR, I
论文数:
0
引用数:
0
h-index:
0
PETR, I
机构
:
来源
:
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
|
1985年
/ 95卷
/ 03期
关键词
:
D O I
:
10.1007/BF02168280
中图分类号
:
O65 [分析化学];
学科分类号
:
070302 ;
081704 ;
摘要
:
引用
收藏
页码:195 / 200
页数:6
相关论文
共 50 条
[1]
HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
CURTIS, OL
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
SROUR, JR
CHIU, KY
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250
CHIU, KY
JOURNAL OF APPLIED PHYSICS,
1974,
45
(10)
: 4506
-
4513
[2]
OBSERVATIONS OF ELECTRON AND HOLE TRANSPORT THROUGH THIN SIO2-FILMS
HSU, ST
论文数:
0
引用数:
0
h-index:
0
HSU, ST
RCA REVIEW,
1981,
42
(03):
: 434
-
440
[3]
HOLE TRANSPORT AND TRAPPING IN SIO2-FILMS
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
POWELL, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: C85
-
C85
[4]
Formation and decay mechanisms of electron-hole pairs in amorphous SiO2
Uchino, T
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Uchino, T
Takahashi, M
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Takahashi, M
Yoko, T
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
Yoko, T
APPLIED PHYSICS LETTERS,
2002,
80
(07)
: 1147
-
1149
[5]
METHOD FOR REDUCING THE HOLE AND ELECTRON TRAPPING DENSITIES IN THERMAL SIO2-FILMS
IWAMATSU, S
论文数:
0
引用数:
0
h-index:
0
IWAMATSU, S
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
TARUI, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 1078
-
1080
[6]
HOLE INJECTION AND TRANSPORT IN SIO2-FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
APPLIED PHYSICS LETTERS,
1975,
27
(08)
: 437
-
439
[7]
Spatial distribution of electron-hole pairs induced by electrons and protons in SiO2
Murat, M
论文数:
0
引用数:
0
h-index:
0
机构:
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Murat, M
Akkerman, A
论文数:
0
引用数:
0
h-index:
0
机构:
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Akkerman, A
Barak, J
论文数:
0
引用数:
0
h-index:
0
机构:
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Soreq Nucl Res Ctr, IL-81800 Yavne, Israel
Barak, J
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
2004,
51
(06)
: 3211
-
3218
[8]
HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS
HUGHES, RC
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HUGHES, RC
APPLIED PHYSICS LETTERS,
1975,
26
(08)
: 436
-
438
[9]
HOLE PHOTOCURRENTS AND ELECTRON TUNNEL INJECTION INDUCED BY TRAPPED HOLES IN SIO2-FILMS
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
POWELL, RJ
JOURNAL OF APPLIED PHYSICS,
1975,
46
(10)
: 4557
-
4563
[10]
RADIATION-INDUCED HOLE TRANSPORT AND ELECTRON TUNNEL INJECTION IN SIO2-FILMS
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
POWELL, RJ
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2240
-
2246
←
1
2
3
4
5
→