MANY-BODY EFFECTS IN THE ELECTRON-HOLE PLASMA CONFINED IN GAAS-(GAAL) AS QUANTUM WELLS

被引:12
作者
BONGIOVANNI, G [1 ]
STAEHLI, JL [1 ]
MARTIN, D [1 ]
机构
[1] ECOLE POLYTECH FED LAUSANNE,INST MICROELECTR & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期
关键词
Light--Nonlinear Optical Effects - Photoluminescence--Solids - Semiconducting Gallium Compounds--Optical Properties - Semiconductor Materials--Plasmas - Spectroscopy;
D O I
10.1002/pssb.2221500254
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Two-beam transmission and photoluminescence spectra of GaAs-(GaAl)As multiple quantum wells are presented. The spectra are studied as a function of the electron-hole (e-h) pair density. At low and with increasing density a blue-shift of the lowest exciton line is found. At densities above the Mott value, the band gap reduction depends on the width of the well and is much smaller than in a strictly two-dimensional e-h plasma. Further, even in a relatively dense plasma the excitonic enhancement factor differs strongly from unity, though it depends only weakly on the energy.
引用
收藏
页码:685 / 690
页数:6
相关论文
共 19 条
  • [1] EFFECT OF SUBBAND COUPLING ON EXCITON BINDING-ENERGIES AND OSCILLATOR-STRENGTHS IN GAAS-GA1-XALXAS QUANTUM WELLS
    ANDREANI, LC
    PASQUARELLO, A
    [J]. EUROPHYSICS LETTERS, 1988, 6 (03): : 259 - 264
  • [2] BONGIOVANNI G, IN PRESS
  • [3] ELECTRON-HOLE PLASMA IN DIRECT-GAP GA1-XALXAS AND K-SELECTION RULE
    CAPIZZI, M
    MODESTI, S
    FROVA, A
    STAEHLI, JL
    GUZZI, M
    LOGAN, RA
    [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2028 - 2035
  • [4] FEHRENBACH GW, 1985, 17TH P INT C PHYS SE, P1257
  • [5] ELECTRON THEORY OF THE OPTICAL-PROPERTIES OF LASER-EXCITED SEMICONDUCTORS
    HAUG, H
    SCHMITTRINK, S
    [J]. PROGRESS IN QUANTUM ELECTRONICS, 1984, 9 (01) : 3 - 100
  • [6] GAIN SPECTRUM OF AN E-H LIQUID IN DIRECT GAP SEMICONDUCTORS
    HAUG, H
    TRANTHOAI, DB
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02): : 581 - 589
  • [7] WELL-SIZE DEPENDENCE OF EXCITON BLUE SHIFT IN GAAS MULTIPLE-QUANTUM-WELL STRUCTURES
    HULIN, D
    MYSYROWICZ, A
    ANTONETTI, A
    MIGUS, A
    MASSELINK, WT
    MORKOC, H
    GIBBS, HM
    PEYGHAMBARIAN, N
    [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4389 - 4391
  • [8] OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS
    KLINGSHIRN, C
    HAUG, H
    [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1981, 70 (05): : 315 - 398
  • [9] EXPERIMENTAL EXCITON BINDING-ENERGIES IN GAAS ALXGA1-XAS QUANTUM WELLS AS A FUNCTION OF WELL WIDTH
    KOTELES, ES
    CHI, JY
    [J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6332 - 6335
  • [10] ANALYSIS OF THE EXCITONIC MOTT TRANSITION IN GASE
    PAVESI, L
    STAEHLI, JL
    CAPOZZI, V
    [J]. SOLID STATE COMMUNICATIONS, 1987, 61 (05) : 321 - 325