共 19 条
- [1] EFFECT OF SUBBAND COUPLING ON EXCITON BINDING-ENERGIES AND OSCILLATOR-STRENGTHS IN GAAS-GA1-XALXAS QUANTUM WELLS [J]. EUROPHYSICS LETTERS, 1988, 6 (03): : 259 - 264
- [2] BONGIOVANNI G, IN PRESS
- [3] ELECTRON-HOLE PLASMA IN DIRECT-GAP GA1-XALXAS AND K-SELECTION RULE [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2028 - 2035
- [4] FEHRENBACH GW, 1985, 17TH P INT C PHYS SE, P1257
- [6] GAIN SPECTRUM OF AN E-H LIQUID IN DIRECT GAP SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02): : 581 - 589
- [7] WELL-SIZE DEPENDENCE OF EXCITON BLUE SHIFT IN GAAS MULTIPLE-QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4389 - 4391
- [8] OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1981, 70 (05): : 315 - 398
- [9] EXPERIMENTAL EXCITON BINDING-ENERGIES IN GAAS ALXGA1-XAS QUANTUM WELLS AS A FUNCTION OF WELL WIDTH [J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6332 - 6335
- [10] ANALYSIS OF THE EXCITONIC MOTT TRANSITION IN GASE [J]. SOLID STATE COMMUNICATIONS, 1987, 61 (05) : 321 - 325