THE ANNEALING OF MEV ENERGY BORON IONS IMPLANTED INTO SILICON

被引：0

作者：

LU, WX ^{[1
]}

QIAN, YH ^{[1
]}

LU, DT ^{[1
]}

WANG, ZL ^{[1
]}

机构：

[1] SHANDONG UNIV,SHANDONG,PEOPLES R CHINA

来源：

VACUUM | 1989年 / 39卷 / 2-4期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 226

页数：4

共 10 条

[1] DAMAGE INDUCED THROUGH MEGAVOLT ARSENIC IMPLANTATION INTO SILICON
BYRNE, PF
CHEUNG, NW
SADANA, DK
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 537 - 539
[2] APPLICATIONS OF MEV ION-BEAMS TO MATERIAL PROCESSING
INGRAM, DC
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (01) : 161 - 169
[3] Kostka A., 1973, Radiation Effects, V19, P77, DOI 10.1080/00337577308232222
[4] THE ANNEALING OF 1-MEV IMPLANTATIONS OF BORON IN SILICON
OOSTERHOFF, S
MIDDELHOEK, J
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (05) : 427 - 433
[5] MEV IMPLANTATION FOR VLSI
PRAMANIK, D
SAXENA, AN
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY) : 493 - 497
[6] HIGH-ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON
SKORUPA, W
WIESER, E
GROETZSCHEL, R
POSSELT, M
BUECKE, H
ARMIGLIATO, A
GARULLI, A
BEYER, A
MARKGRAF, W
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 335 - 339
[7] SMITH B, 1977, ION IMPLANTATION RAN
[8] DEPTH DISTRIBUTION OF SECONDARY DEFECTS IN 2-MEV BORON-IMPLANTED SILICON
TAMURA, M
NATSUAKI, N
WADA, Y
MITANI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3417 - 3420
[9] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
[10] HIGH-ENERGY ION-IMPLANTATION
ZIEGLER, JF
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 270 - 282

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