DETERMINATION OF OPTICAL, ELASTIC, AND ACOUSTICAL PROPERTIES OF POROUS SILICON AS A FUNCTION OF ANODIZATION CURRENT DENSITY

被引：1

作者：

Jothi, S. ^{[1
]}

Pandiarajan, J. ^{[1
]}

Lakshmipriya, V. ^{[1
]}

Prithivikumaran, N. ^{[1
]}

Natarajan, B. ^{[2
]}

Jeyakumaran, N. ^{[1
]}

机构：

[1] Virudhunagar Hindu Nadars Senthikumara Nadar Coll, Dept Phys, Virudunagar 626001, Tamil Nadu, India

[2] Raja Duraisingam Govt Arts Coll, Dept Phys, Sivagangai 630561, Tamil Nadu, India

来源：

SPECIAL TOPICS & REVIEWS IN POROUS MEDIA-AN INTERNATIONAL JOURNAL | 2014年 / 5卷 / 01期

关键词：

porous silicon; photoluminescence; refractive index; elastic constants; acoustic parameters;

D O I：

10.1615/SpecialTopicsRevPorousMedia.v5.i1.50

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Researchers have shown great interest in porous silicon due to the fact that it can be fabricated with specific material characteristics. The electrical, optical, chemical, and mechanical characteristics of the material can all be modified by changing parameters of the fabrication process. The porous silicon was prepared by electrochemical etching of p-type silicon wafer where the etchant consists of a mixture of hydrofluoric acid and ethanol with various anodization current densities and 10 min etching time. The bulk modulus, Young's modulus, propagation velocities of longitudinal and transverse waves, and elastic constants are investigated. The presently investigated numerical data are found to have, in general, good agreement with the available experiment data and other such theoretical values.

引用

页码：53 / 62

页数：10

共 50 条

[31] ACOUSTICAL AND OPTICAL TRANSPARENCY, ELASTIC AND PHOTO-ELASTIC PROPERTIES OF ZINC DIPHOSPHIDE
ILISAVSKII, YV
KULAKOVA, LA
PEVTSOV, AB
SMOLYARENKO, EM
SHELEG, AU
YAKHHIND, EZ
FIZIKA TVERDOGO TELA, 1981, 23 (06): : 1816 - 1818
[32] The Effect of Current Density on Nanostructured Porous Silicon
Ilham, A. N.
Rafaie, H. A.
Abdullah, S.
Rusop, M.
NANOSCIENCE AND NANOTECHNOLOGY, 2009, 1136 : 815 - 819
[33] Influence of Current Density on Porous Silicon Characteristics
Abd, Husnen R.
Ahmed, Naser M.
Al-Douri, Y.
Hashim, U.
2ND INTERNATIONAL CONFERENCE ON SUSTAINABLE MATERIALS (ICOSM 2013), 2013, 795 : 219 - +
[34] Influence of anodization time and current density on the photoluminescence of porous N-Si
Martin, P
Fernandez, JF
Cuevas, F
Alguero, M
Sanchez, C
THIN SOLID FILMS, 1996, 276 (1-2) : 212 - 215
[35] Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure
Das, M.
Nath, P.
Sarkar, D.
SUPERLATTICES AND MICROSTRUCTURES, 2016, 90 : 77 - 86
[36] Stress generated on aluminum during anodization as a function of current density and pH
Benjamin, SE
Khalid, FA
OXIDATION OF METALS, 1999, 52 (3-4): : 209 - 223
[37] Stress generated on aluminum during anodization as a function of current density and pH
Benjamin, S.E.
Khalid, Fazal A.
Oxidation of Metals, 1999, 52 (03): : 209 - 223
[38] Stress Generated on Aluminum During Anodization as a Function of Current Density and pH
S. E. Benjamin
Fazal A. Khalid
Oxidation of Metals, 1999, 52 : 209 - 223
[39] Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector
Al-Jumaili, Batool Eneaze B.
Talib, Zainal A.
Ramizy, Asmiet
Ahmed, Naser M.
Josephine, L. Y.
Paiman, Suriati B.
Muhd, Ibrahim B.
Abdulateef, Sinan A.
JOURNAL OF NANOMATERIALS, 2016, 2016
[40] Surface and optical properties of porous silicon
Naval Research Lab, Washington, United States
J Mater Res, 2 (305-320):

← 1 2 3 4 5 →