ALUMINUM OXIDE SILICON DIOXIDE, DOUBLE-INSULATOR, MOS STRUCTURE

被引：6

作者：

CLEMENS, JT ^{[1
]}

LABUDA, EF ^{[1
]}

BERGLUND, CN ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1975年 / 54卷 / 04期

关键词：

D O I：

10.1002/j.1538-7305.1975.tb02861.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：687 / 719

页数：33

共 20 条

[1]

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[2] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].

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[3]

CLEMENS JT, 1973, SEMICONDUCTOR SILICO, P779

[4]

CURRY JJ, 1970, 8 ANN P REL PHYS, P29

[5] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[6] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].

DEAL, BE ;

GROVE, AS ;

SNOW, EH ;

SAH, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&

[7] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS [J].

GOETZBERGER, A ;

NIGH, HE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1454-+

[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[9]

GROVE AS, 1967, PHYS TECHNOL S, pCH9

[10]

Hammer R., 1970, Review of Scientific Instruments, V41, P292, DOI 10.1063/1.1684503

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