TRANSPORT AND PERSISTENT PHOTOCONDUCTIVITY IN INP/INGAAS SINGLE QUANTUM-WELLS

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318

[2] SELF-CONSISTENT CALCULATIONS OF CHARGE-TRANSFER AND ALLOY SCATTERING-LIMITED MOBILITY IN INP-GA1-XINXASYP1-Y SINGLE QUANTUM WELLS [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (08) : 727 - 730

[3] HAYES JR, 1982, GAINASP ALLOY SEMICO, pCH8

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664

[6] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] NICHOLAS RJ, 1985, PHYSICS, V48, P1699

[9] PEARSALL TP, 1982, GAINASP ALLOY SEMICO

[10] OBSERVATION OF INTERSUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-SYSTEM [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (10) : 707 - 709

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318

[2] SELF-CONSISTENT CALCULATIONS OF CHARGE-TRANSFER AND ALLOY SCATTERING-LIMITED MOBILITY IN INP-GA1-XINXASYP1-Y SINGLE QUANTUM WELLS [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (08) : 727 - 730

[3] HAYES JR, 1982, GAINASP ALLOY SEMICO, pCH8

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664

[6] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] NICHOLAS RJ, 1985, PHYSICS, V48, P1699

[9] PEARSALL TP, 1982, GAINASP ALLOY SEMICO

[10] OBSERVATION OF INTERSUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-SYSTEM [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (10) : 707 - 709