Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

被引：12

作者：

Yan Wei ^{[1
]}

Zhang Renping ^{[1
]}

Du Yandong ^{[1
]}

Han Weihua ^{[1
]}

Yang Fuhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Engn Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 06期

关键词：

AlGaN; GaN; high electron mobility transistor; annealing; ohmic contact;

D O I：

10.1088/1674-4926/33/6/064005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The multi-step rapid thermal annealing process of Ti/Al/Ni/Au can make good ohmic contacts with both low contact resistance and smooth surface morphology for AlGaN/GaN HEMTs. In this work, the mechanism of the multi-step annealing process is analyzed in detail by specific experimental methods. The experimental results show that annealing temperature and time are very important parameters when optimizing the Ti/Al layer for lower resistance and the Ni/Au layer for smooth surface morphology. It is very important for good ohmic contacts to balance the rate of various reactions by adjusting the annealing temperature and time. We obtained a minimum specific contact resistance of 3.22 x 10(-7) Omega.cm 2 on the un-doped AlGaN/GaN structure with an optimized multistep annealing process.

引用

页数：6

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