REDUCTION OF DEEP-LEVEL IMPURITIES IN ZN-DOPED ALXGA1-XAS BY A CO-DOPANT TECHNIQUE

被引：2

作者：

CHEN, JC ^{[1
]}

HUANG, ZC ^{[1
]}

YU, T ^{[1
]}

CHEN, HK ^{[1
]}

LEE, KJ ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4B期

关键词：

CO-DOPANT; RNOCVD; DEEP IMPURITY; DLTS; PL;

D O I：

10.1143/JJAP.34.L476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a novel co-dopant technique in the metalorganic chemical vapor deposition (MOCVD) process, we have achieved very low deep level densities (N-t<5x10(13) cm(-3)) and improved optical properties in Zn-doped (N-A-N-D=1 x 10(18) cm(-3)) Al0.2Ga0.8As epitaxial layers, This technique employed both p- (Zn) and n-type (Se) dopants in the growth of p-type Al0.2Ga0.8As. Samples were characterized by deep level transient spectroscopy (DLTS1 and photoluminescence (PL). We have found that a small amount of Se (n similar to 8x10(16)/cm(3)) in Zn-dopgd (p similar to 1x10(18)/cm(-3)) Al0.2Ga0.8As will significantly reduce the density of deep level impurities thy more than one order of magnitude) and increase the photoluminescence efficiency.

引用

页码：L476 / L478

页数：3

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