ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF ZN DIFFUSED P+-N INP HOMOJUNCTIONS

被引：1
作者：
DHOUIB, A
CONJEAUD, AL
MALOUMBI, B
GOUSKOV, L
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来源：
JOURNAL DE PHYSIQUE | 1985年 / 46卷 / 06期
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D O I：
10.1051/jphys:01985004606094700
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页码：947 / 954
页数：8
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共 19 条
  • [1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP
    ANDO, H
    SUSA, N
    KANBE, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L197 - L200
  • [2] DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650-DEGREES-C
    CHAND, N
    HOUSTON, PA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 37 - 52
  • [3] DEVLIN WJ, 1979, I PHYS C SER, V45, P510
  • [4] OPEN AMPOULE DIFFUSION IN INP
    FAVENNEC, PN
    HENRY, L
    GAUNEAU, M
    LHARIDON, H
    PELOUS, G
    [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 832 - 833
  • [5] ELECTRON-DIFFUSION LENGTHS IN PARA-TYPE INP INVOLVED IN INDIUM TIN OXIDE PARA-INP SOLAR-CELLS
    GOUSKOV, L
    LUQUET, H
    SOONCKINDT, L
    OEMRY, A
    BOUSTANI, M
    NGUYEN, PH
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7014 - 7019
  • [6] ELECTRICAL-PROPERTIES OF ZINC DIFFUSED INDIUM-PHOSPHIDE
    HOOPER, A
    TUCK, B
    [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 513 - 517
  • [7] Hovel HJ, 1975, SEMICONDUCTORS SEMIM, VII
  • [8] THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD
    KAZMIERSKI, K
    HUBER, AM
    MORILLOT, G
    DECREMOUX, B
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05): : 628 - 633
  • [9] DARK CURRENT AND BREAKDOWN CHARACTERISTICS OF DISLOCATION-FREE INP PHOTO-DIODES
    LEE, TP
    BURRUS, CA
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 587 - 589
  • [10] DIFFUSION OF CD AND ZN INTO INP AND INGAASP (EG=0.95-1.35EV)
    MATSUMOTO, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (11): : 1699 - 1704
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