TUNNELING THROUGH NARROW-GAP SEMICONDUCTOR BARRIERS

被引：21

作者：

HEREMANS, J ^{[1
]}

PARTIN, DL ^{[1
]}

DRESSELHAUS, PD ^{[1
]}

LAX, B ^{[1
]}

机构：

[1] MIT, FRANCIS BITTER NATL MAGNET LAB, CAMBRIDGE, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：644 / 646

页数：3

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