INSITU LASER REFLECTOMETRY APPLIED TO THE GROWTH OF ALXGA1-XAS BRAGG REFLECTORS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：30

作者：

FRATESCHI, NC ^{[1
]}

HUMMEL, SG ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

LASER APPLICATIONS;

D O I：

10.1049/el:19910100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser reflectometry has been applied as an in situ growth monitoring tool for the MOCVD growth of Bragg reflectors. Reproducible accuracy of 4 nm of the stop band centre was achieved for AlAs/GaAs mirrors. AlGaAs/AlAs mirrors requiring in situ composition calibration were also successfully grown.

引用

页码：155 / 157

页数：3

共 5 条

[1] LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

LEE, YH ;

WALKER, S ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124

[2] NORMALLY-OFF HIGH-CONTRAST ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR USING WANNIER-STARK LOCALIZATION IN A SUPERLATTICE [J].

LAW, KK ;

YAN, RH ;

MERZ, JL ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1886-1888

[3] INSITU GROWTH-RATE MEASUREMENTS DURING MOLECULAR-BEAM EPITAXY USING AN OPTICAL-PYROMETER [J].

SPRINGTHORPE, AJ ;

HUMPHREYS, TP ;

MAJEED, A ;

MOORE, WT .

APPLIED PHYSICS LETTERS, 1989, 55 (20) :2138-2140

[4] PRECISION ALGAAS BRAGG REFLECTORS FABRICATED BY PHASE-LOCKED EPITAXY [J].

WALKER, JD ;

MALLOY, K ;

WANG, S ;

SMITH, JS .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2493-2495

[5] EFFECTS OF LAYER THICKNESS VARIATIONS ON VERTICAL-CAVITY SURFACE-EMITTING DBR SEMICONDUCTOR-LASERS [J].

WEBER, JP ;

MALLOY, K ;

WANG, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :162-164

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