ON THE OPTIMIZATION OF VLSI CONTACTS

被引:18
作者
MADDOX, RL
机构
关键词
D O I
10.1109/T-ED.1985.21999
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:682 / 690
页数:9
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共 57 条
[1]  
[Anonymous], SEMICONDUCTOR INT
[2]  
ARMIGLIATO A, 1980, P MATER RES SOC S AM
[3]   BEHAVIOR OF BORON MOLECULAR ION IMPLANTS INTO SILICON [J].
BEANLAND, DG .
SOLID-STATE ELECTRONICS, 1978, 21 (03) :537-547
[4]   CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].
BERGER, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&
[5]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[6]  
BRORS DL, 1984, SOLID STATE TECHNOL, V27, P313
[7]   SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
FANG, YK ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&
[8]  
CHEN JY, 1981, S VLSI TECH DIG, V2, P22
[9]   DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J].
CHERN, JGJ ;
OLDHAM, WG .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :178-180
[10]  
CHERNYAEV AV, 1979, SOV MICROELECTRON+, V8, P377