首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
DISSOLUTION KINETICS IN LANGMUIR-BLODGETT FILMS OF SOLID-STATE POLYMERIZED OMEGA-TRICOSENOIC ACID
被引:11
作者
:
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
机构
:
来源
:
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
|
1983年
/ 96卷
/ 1-4期
关键词
:
D O I
:
10.1080/00268948308074716
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
引用
收藏
页码:353 / 359
页数:7
相关论文
共 8 条
[1]
POLYMERIZED MONO-MOLECULAR LAYERS - A NEW CLASS OF ULTRATHIN RESINS FOR MICROLITHOGRAPHY
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
RUAUDELTEIXIER, A
.
THIN SOLID FILMS,
1980,
68
(01)
:91
-98
[2]
SOLID-STATE ELECTRON-INDUCED POLYMERIZATION OF OMEGA-TRICOSENOIC ACID MULTILAYERS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
RUAUDELTEIXIER, A
.
JOURNAL OF COLLOID AND INTERFACE SCIENCE,
1977,
62
(03)
:509
-523
[3]
MODEL OF THE DISSOLUTION OF MONO-MOLECULAR PHOTORESISTS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
.
THIN SOLID FILMS,
1981,
85
(01)
:77
-85
[4]
RECENT IMPROVEMENTS IN MONO-MOLECULAR RESISTS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
RUAUDELTEIXIER, A
.
THIN SOLID FILMS,
1980,
68
(01)
:99
-100
[5]
MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
;
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
NEUREUTHER, AR
;
TUTTLE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
TUTTLE, JA
;
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
WALKER, EJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:456
-464
[6]
COMPUTER-SIMULATION OF EXPOSURE AND DEVELOPMENT OF A POSITIVE PHOTORESIST
[J].
FUJIMORI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Ibaraki Electrical Communication Laboratory, Tokai, Ibaraki
FUJIMORI, S
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:615
-623
[7]
DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST
[J].
GREENEICH, JS
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GREENEICH, JS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(07)
:970
-976
[8]
Schmidt G.M.J., 1967, REACTIVITY PHOTOEXCI, P227
←
1
→
共 8 条
[1]
POLYMERIZED MONO-MOLECULAR LAYERS - A NEW CLASS OF ULTRATHIN RESINS FOR MICROLITHOGRAPHY
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
RUAUDELTEIXIER, A
.
THIN SOLID FILMS,
1980,
68
(01)
:91
-98
[2]
SOLID-STATE ELECTRON-INDUCED POLYMERIZATION OF OMEGA-TRICOSENOIC ACID MULTILAYERS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
机构:
CENS,F-91190 GIF SUR YVETTE,FRANCE
CENS,F-91190 GIF SUR YVETTE,FRANCE
RUAUDELTEIXIER, A
.
JOURNAL OF COLLOID AND INTERFACE SCIENCE,
1977,
62
(03)
:509
-523
[3]
MODEL OF THE DISSOLUTION OF MONO-MOLECULAR PHOTORESISTS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
.
THIN SOLID FILMS,
1981,
85
(01)
:77
-85
[4]
RECENT IMPROVEMENTS IN MONO-MOLECULAR RESISTS
[J].
BARRAUD, A
论文数:
0
引用数:
0
h-index:
0
BARRAUD, A
;
ROSILIO, C
论文数:
0
引用数:
0
h-index:
0
ROSILIO, C
;
RUAUDELTEIXIER, A
论文数:
0
引用数:
0
h-index:
0
RUAUDELTEIXIER, A
.
THIN SOLID FILMS,
1980,
68
(01)
:99
-100
[5]
MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
;
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
NEUREUTHER, AR
;
TUTTLE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
TUTTLE, JA
;
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
WALKER, EJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:456
-464
[6]
COMPUTER-SIMULATION OF EXPOSURE AND DEVELOPMENT OF A POSITIVE PHOTORESIST
[J].
FUJIMORI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Ibaraki Electrical Communication Laboratory, Tokai, Ibaraki
FUJIMORI, S
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:615
-623
[7]
DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST
[J].
GREENEICH, JS
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090
GREENEICH, JS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(07)
:970
-976
[8]
Schmidt G.M.J., 1967, REACTIVITY PHOTOEXCI, P227
←
1
→