LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS

被引：60

作者：

GOLDSTEIN, B ^{[1
]}

SZOSTAK, DJ ^{[1
]}

BAN, VS ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

SURFACE SCIENCE | 1976年 / 57卷 / 02期

关键词：

D O I：

10.1016/0039-6028(76)90358-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：733 / 740

页数：8

相关论文

共 13 条

[1] ARTHUR J, 1969, P C STRUCTURE CHEMIS
[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &
[4] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[5] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
FOXON, CT
HARVEY, JA
JOYCE, BA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &
[6] DIFFUSION IN COMPOUND SEMICONDUCTORS
GOLDSTEIN, B
[J]. PHYSICAL REVIEW, 1961, 121 (05): : 1305 - &
[7] LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O
GOLDSTEIN, B
[J]. SURFACE SCIENCE, 1975, 47 (01) : 143 - 161
[8] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[9] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C
JONA, F
WENDT, HR
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3637 - &
[10] The vapor pressure of metallic tungsten
Langmuir, I
[J]. PHYSICAL REVIEW, 1913, 2 (05): : 329 - 342