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LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS
被引:60
作者
:
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
[
1
]
SZOSTAK, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SZOSTAK, DJ
[
1
]
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
[
1
]
机构
:
[1]
RCA LABS,PRINCETON,NJ 08540
来源
:
SURFACE SCIENCE
|
1976年
/ 57卷
/ 02期
关键词
:
D O I
:
10.1016/0039-6028(76)90358-7
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:733 / 740
页数:8
相关论文
共 13 条
[1]
ARTHUR J, 1969, P C STRUCTURE CHEMIS
[2]
VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
[J].
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(11)
:2257
-&
[3]
INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
[J].
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
:4032
-&
[4]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
[J].
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
:2436
-2448
[5]
EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
[J].
FOXON, CT
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
FOXON, CT
;
HARVEY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
HARVEY, JA
;
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
JOYCE, BA
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(10)
:1693
-&
[6]
DIFFUSION IN COMPOUND SEMICONDUCTORS
[J].
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
GOLDSTEIN, B
.
PHYSICAL REVIEW,
1961,
121
(05)
:1305
-&
[7]
LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O
[J].
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
.
SURFACE SCIENCE,
1975,
47
(01)
:143
-161
[8]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
[J].
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
:375
-&
[9]
PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C
[J].
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
;
WENDT, HR
论文数:
0
引用数:
0
h-index:
0
WENDT, HR
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3637
-&
[10]
The vapor pressure of metallic tungsten
[J].
Langmuir, I
论文数:
0
引用数:
0
h-index:
0
机构:
Gen Elect Co, Res Lab, Schenectady, NY USA
Gen Elect Co, Res Lab, Schenectady, NY USA
Langmuir, I
.
PHYSICAL REVIEW,
1913,
2
(05)
:329
-342
←
1
2
→
共 13 条
[1]
ARTHUR J, 1969, P C STRUCTURE CHEMIS
[2]
VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
[J].
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(11)
:2257
-&
[3]
INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
[J].
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
:4032
-&
[4]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
[J].
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
:2436
-2448
[5]
EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
[J].
FOXON, CT
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
FOXON, CT
;
HARVEY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
HARVEY, JA
;
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
JOYCE, BA
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(10)
:1693
-&
[6]
DIFFUSION IN COMPOUND SEMICONDUCTORS
[J].
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
GOLDSTEIN, B
.
PHYSICAL REVIEW,
1961,
121
(05)
:1305
-&
[7]
LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O
[J].
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
.
SURFACE SCIENCE,
1975,
47
(01)
:143
-161
[8]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
[J].
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
:375
-&
[9]
PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C
[J].
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
;
WENDT, HR
论文数:
0
引用数:
0
h-index:
0
WENDT, HR
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3637
-&
[10]
The vapor pressure of metallic tungsten
[J].
Langmuir, I
论文数:
0
引用数:
0
h-index:
0
机构:
Gen Elect Co, Res Lab, Schenectady, NY USA
Gen Elect Co, Res Lab, Schenectady, NY USA
Langmuir, I
.
PHYSICAL REVIEW,
1913,
2
(05)
:329
-342
←
1
2
→