STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION

被引：18

作者：

CAO, M ^{[1
]}

ZHAO, TM ^{[1
]}

SARASWAT, KC ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV, CTR INTEGRATED SYST, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenation of polysilicon (poly-Si) thin film transistors (TFT's) by ion implantation has been systematically studied, Poly-Si TFT performance was dramatically improved by hydrogen ion implantation followed by a forming gas anneal (FGA). The threshold voltage, channel mobility, subthreshold swing, leakage current, and ON/OFF current ratio have been studied as functions of ion implantation dose and FGA temperature. Under the optimized conditions (H+ dose of 5 x 10(15) cm(-2) and FGA temperature at 375 degrees C), NMOS poly-Si TFT's fabricated by a low temperature 600 degrees C process have a mobility of similar to 27 cm (2)/V . s, a threshold voltage of similar to 2 V, a subthreshold siting of similar to 0.9 V/decade, and an OFF-state leakage current of similar to 7 pA/mu m at V-DS = 10 V. The avalanche induced kink effect was found to be reduced after hydrogenation.

引用

页码：1134 / 1140

页数：7

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[31] A STUDY OF HYDROGEN PASSIVATION OF GRAIN-BOUNDARIES IN POLYSILICON THIN-FILM TRANSISTORS [J].

FAUGHNAN, B ;

IPRI, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) :101-107

[32] 10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS [J].

WATTS, RK ;

LEE, JTC .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (11) :515-517

[33] Performance enhancement of offset gated polysilicon thin-film transistors [J].

Dimitriadis, CA ;

Miyasaka, M .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (12) :584-586

[34] Modelling velocity saturation effects in polysilicon thin-film transistors [J].

Valletta, A. ;

Gaucci, P. ;

Mariucci, L. ;

Fortunato, G. .

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[35] AVALANCHE-INDUCED EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

LEWIS, AG .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) :203-205

[36] HIGH-FIELD EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

QUINN, M ;

MIGLIORATO, P ;

REITA, C ;

PECORA, A ;

TALLARIDA, G ;

FORTUNATO, G .

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1994, 141 (01) :45-49

[37] PHYSICAL MODELS FOR DEGRADATION EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

LEWIS, AG ;

WU, IW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :890-897

[38] CHARACTERISTICS OF NARROW-CHANNEL POLYSILICON THIN-FILM TRANSISTORS [J].

YAMAUCHI, N ;

HAJJAR, JJJ ;

REIF, R ;

NAKAZAWA, K ;

TANAKA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) :1967-1968

[39] STRUCTURAL MODIFICATIONS INDUCED BY ION-IMPLANTATION IN NB-N THIN-FILM SUPERCONDUCTORS [J].

SKELTON, EF ;

SKOKAN, MR ;

CUKAUSKAS, E .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1981, 14 (FEB) :51-57

[40] EFFECTS OF THIN CONDUCTIVE FILM MASK ON ION-IMPLANTATION [J].

NAKATSUKA, M ;

TANAKA, K ;

KIKKAWA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1829-1832

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