STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION

被引：18
作者：
CAO, M [1 ]
ZHAO, TM [1 ]
SARASWAT, KC [1 ]
PLUMMER, JD [1 ]
机构：
[1] STANFORD UNIV, CTR INTEGRATED SYST, STANFORD, CA 94305 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/16.387248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogenation of polysilicon (poly-Si) thin film transistors (TFT's) by ion implantation has been systematically studied, Poly-Si TFT performance was dramatically improved by hydrogen ion implantation followed by a forming gas anneal (FGA). The threshold voltage, channel mobility, subthreshold swing, leakage current, and ON/OFF current ratio have been studied as functions of ion implantation dose and FGA temperature. Under the optimized conditions (H+ dose of 5 x 10(15) cm(-2) and FGA temperature at 375 degrees C), NMOS poly-Si TFT's fabricated by a low temperature 600 degrees C process have a mobility of similar to 27 cm (2)/V . s, a threshold voltage of similar to 2 V, a subthreshold siting of similar to 0.9 V/decade, and an OFF-state leakage current of similar to 7 pA/mu m at V-DS = 10 V. The avalanche induced kink effect was found to be reduced after hydrogenation.
引用
收藏
页码：1134 / 1140
页数：7
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