HOLE POLARIZATION AND SLOW HOLE-SPIN RELAXATION IN AN N-DOPED QUANTUM-WELL STRUCTURE

被引：41

作者：

ROUSSIGNOL, P

ROLLAND, P

FERREIRA, R

DELALANDE, C

BASTARD, G

VINATTIERI, A

MARTINEZPASTOR, J

CARRARESI, L

COLOCCI, M

PALMIER, JF

ETIENNE, B

机构：

[1] UNIV FLORENCE, EUROPEO SPETTROSCOPIE NON LINEARI LAB, I-50125 FLORENCE, ITALY

[2] UNIV FLORENCE, DIPARTIMENTO FIS, I-50125 FLORENCE, ITALY

[3] CTR BAGNEUX, F-92220 BAGNEUX, FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.7292

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study of the dependence of the hole-spin relaxation on the electron density in an n-modulation-doped 75-angstrom GaAs/AlxGa1-xAs quantum well by using cw and time-resolved photo-luminescence techniques, at low temperature. The electron concentration has been continuously varied from 10(11) to 10(12) cm-2. A slow hole-spin relaxation time has been found (almost-equal-to 1 ns). A polarization decrease has also been observed when the in-plane wave vector of the photocreated holes increases. Calculations are presented which qualitatively support the latter experimental findings.

引用

页码：7292 / 7295

页数：4