HOLE POLARIZATION AND SLOW HOLE-SPIN RELAXATION IN AN N-DOPED QUANTUM-WELL STRUCTURE

被引：42
作者：
ROUSSIGNOL, P
ROLLAND, P
FERREIRA, R
DELALANDE, C
BASTARD, G
VINATTIERI, A
MARTINEZPASTOR, J
CARRARESI, L
COLOCCI, M
PALMIER, JF
ETIENNE, B
机构：
[1] UNIV FLORENCE, EUROPEO SPETTROSCOPIE NON LINEARI LAB, I-50125 FLORENCE, ITALY
[2] UNIV FLORENCE, DIPARTIMENTO FIS, I-50125 FLORENCE, ITALY
[3] CTR BAGNEUX, F-92220 BAGNEUX, FRANCE
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.46.7292
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a study of the dependence of the hole-spin relaxation on the electron density in an n-modulation-doped 75-angstrom GaAs/AlxGa1-xAs quantum well by using cw and time-resolved photo-luminescence techniques, at low temperature. The electron concentration has been continuously varied from 10(11) to 10(12) cm-2. A slow hole-spin relaxation time has been found (almost-equal-to 1 ns). A polarization decrease has also been observed when the in-plane wave vector of the photocreated holes increases. Calculations are presented which qualitatively support the latter experimental findings.
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页码：7292 / 7295
页数：4
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